Grinding induced subsurface cracks in silicon …
The grinding wheel has #1200 mesh. Only one side of the wafers is ground and the grinding removal is 15 μm. During grinding, deionized (purified) water is being used for cooling the grinding wheel and the wafer surface. The other grinding parameters are shown in Table 1.
Grinding induced subsurface cracks in silicon wafers
Grinding induced subsurface cracks in silicon wafers. 2019-11-22silicon wafers are used for production of most microchips various processes are needed to transfer a silicon crystal ingot into wafers to ensure high surface quality, the damage layer generated by each of …
Wafer grinding, ultra thin, TAIKO - dicing …
Bonded wafer grinding or ultra-thin grinding may cause edge chipping which is one of the critical issues leading to wafer breakage. Chipping may be induced by the rounded profile of the wafers outer edges. The edge trimming process eliminates the rounded profile of the outer edge ensuring edge strength and chipping decrease.
Grinding induced subsurface cracks in silicon …
Silicon wafers are used for production of most microchips. Various processes are needed to transfer a silicon crystal ingot into wafers. To ensure high surface quality, the damage layer generated by each of the machining processes (such as lapping and grinding) has to be removed by its subsequent processes. Therefore it is essential to assess the subsurface damage for each machining process.
Grinding induced subsurface cracks in silicon wafers
Grinding induced subsurface cracks in silicon wafers Z.J. Pei*, S.R. Billingsley, S. Miura MEMC Electronic Materials, Inc., St Peters, MO 63376, USA Received 26 August 1998 Abstract Silicon wafers are used for production of most microchips. Various processes are needed to transfer a silicon crystal ingot into wafers. To ensure high surface quality, the damage layer generated by each of the ...
A Study of Grinding Marks in Semiconductor Wafer Grinding
of semiconductor wafers induced by wafer grinding. The grinding marks generated by the model were compared with magic mirror pictures of experimental results. There seemed to be a very close resemblance in terms of curvature as well as the distance between two successive grinding marks. Acknowledgement Financial support was provided by the Department of Industrial and Manufacturing …
Formation of subsurface cracks in silicon wafers …
Characterization of the grinding-induced SSD in silicon wafers is complex. Although a nanometer-deep cut induces a nanostructure 17 or amorphous layer 18, 19 on a silicon wafer during grinding, a deeper cut induces SSCs. Of these three types of damage, SSCs are the most detrimental.
A load identification method for the grinding …
In this method, the thinned silicon wafer is diced into 3×3 mm chips, and load identification method is adopted for deriving the GDIS induced by the grinding process. Comparison analysis of chip deformations is carried out with the GDIS obtained by the Stoney equation and the new method. SSD is also observed for providing further information about the GDIS distribution after grinding.
Fine grinding of silicon wafers: a mathematical model for ...
50 Fine grinding of silicon wafers: a mathematical model for grinding 51 marks 52 S. Chidambaram a, Z.J. Pei a,∗, S. Kassir b 53 a Department of Industrial and Manufacturing Systems Engineering, Kansas State University, 237 Durland Hall, Manhattan, KS 66506-5101, 54 USA 55 b Strasbaugh, Inc., 825 Buckley Road, San Luis Obispo, CA 93401, USA 56 Received 7 April 2003 57 58 Abstract 59 The ...
Characterization of Extreme Si Thinning Process for Wafer ...
Characterization of Extreme Si Thinning Process for Wafer-to-Wafer Stacking Fumihiro Inoue 1, Anne Jourdain , ... (CoO). However, mechanical damage such as induced dislocations needs to be removed after extreme thinning to avoid a serious impact on the device performance. CMP shows the best performance in terms of roughness with a significantly flat surface with only atomic step roughness ...
Grinding induced subsurface cracks in silicon …
The effects of grinding parameters such as feedrate and wheel rotational speed on the depth of subsurface crack have been studied by a set of factorial design experiments. Furthermore, the relation between the depth of subsurface crack and the wheel grit size is experimentally determined.
Two-dimensional detection of subsurface …
The radial distributions of the depth of the grinding-induced SSD in the wafers. Fig. 5 shows a two-dimensional distribution of the PLS detection of the silicon chips. It is obvious that the PLS signals of the wafers ground with the #400 wheel are larger than those with the #600 wheel, which can be explained from the depth of SSD, as shown in Fig. 4 .
Surface Grinding in Silicon Wafer Manufacturing
surface grinding in silicon wafer manufacturing --wire- sawn wafer grinding, but will also briefly cover another application -- etched wafer grinding. Following this introduction section is a description of the surface grinding process. After that, the applications to wire- sawn wafers and etched wafers will be presented respectively. Then there will be a section on subsurface damage induced ...
Impact of back-grinding-induced damage on Si wafer ...
Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration Yoriko Mizushima1,2*, Youngsuk Kim2,3, Tomoji Nakamura1, Ryuichi Sugie4, Hideki Hashimoto4, Akira ...
Study of Damage and Stress Induced by …
Assuming a uniform layer of grinding-induced damage, Zhou et al. [5] proposed a mathematical model using the Stoney formula, in which wafer warp was a function of damage depth, residual stress and ...
Fine grinding of silicon wafers - k-state.edu
Fine grinding of silicon wafers Z.J. Pei a,*, Alan Strasbaugh b a Department of Industrial and Manufacturing Systems, Kansas State University, Manhattan, KS 66506, USA b Strasbaugh, Inc., 825 Buckley Road, San Luis Obispo, CA 93401, USA Received 17 November 1999; accepted 5 October 2000 Abstract Silicon wafers are used for the production of most microchips. Various processes are …
Process induced sub-surface damage in mechanically ground ...
processing-induced phase transformations and residual stress in silicon Y Gogotsi, C Baek and F Kirscht-Raman spectroscopy analysis of scratched silicon Yury Gogotsi, Guohui Zhou, Sang-Song Ku et al.-Recent citations Scratching of silicon surfaces M. Budnitzki and M. Kuna-Formation of subsurface cracks in silicon wafers by grinding Jingfei Yin et al-Revealing silicon crystal defects by ...
(PDF) Edge chipping of silicon wafers in diamond …
Edge chipping of silicon wafers in diamond grinding Article (PDF Available) in International Journal of Machine Tools and Manufacture 64:31-37 · January 2013 with 2,451 Reads How we measure reads
Fine Grinding of Silicon Wafers: Grinding Marks | …
Fine Grinding of Silicon Wafers: Grinding Marks. Article in International Journal of Machine Tools and Manufacture 41(5):659-672 · April 2001 with 171 Reads How we measure reads A read is ...